TSMC will use FinFET transistors in 3nm chips
By publishing a recent quarterly report, TSMC first began publishing some facts about its 3-nanometer process technology, designated N3. Contrary to unofficial information, the manufacturer claims that the development of the technical process is going according to plan. Risk production is planned for 2021, and serial production at TSMC is expected to begin in the second half of 2022. Interestingly, after evaluating all the possible options, it was decided to continue using FinFET transistors at the 3 nm stage. According to the manufacturer, this is a proven technology that provides high performance and cost advantage.
The TSMC N3 process technology will allow you to place it on 1 square. mm almost 300 million transistors
The density of elements N3 is 1.7 times higher than the manufacturing process N5. According to the source, this means that the TSMC N3 manufacturing process will allow placing on 1 square. mm, almost 300 million transistors.
In terms of performance and power consumption, N3 will provide an increase in performance by 10-15% at the same power or a reduction in power consumption by 25-30% at the same speed compared to N5.
