SK Hynix is actively working on its own EUV memory technology
The transition to lithographic memory production using EUV scanners promises to reduce the production cost, but the transition process itself is associated with a host of technological problems. These problems were generally resolved by Samsung engineers. SK Hynix looks to be lagging behind in this process but promises to start using EUV scanners in DRAM chips within the next year.
According to South Korean sources, in order to accelerate the study of all aspects related to the use of EUV scanners in memory production, a special working group TF EUV (task force EUV) was established at SK Hynix some time ago. The group is headed by the vice president of the company Jung Tae-woo, whose specialty is the lithographic production of semiconductors. It is he who is credited with the success in developing 10nm class DRAM. He was also tasked with creating a memory release process using the EUV process technology.
According to previously announced plans of the company, DRAM chips with 1α (alpha) nm standards will be produced first using 13.5 nm EUV scanners. Probably, it will be conditionally honest 13 or 14 nm in relation to the spacing of the conductor lines on the crystal. To release memory using EUV scanners, the company is preparing a production line at the M16 plant under construction in Icheon. This facility should be operational in the first half of next year and is likely to be the first to start producing SK Hynix memory using EUV lithography.
According to experts, although SK Hynix lags behind Samsung in using EUV scanners, it has the potential, knowledge, and experience to quickly introduce new memory technology and not be too far behind the competition. In addition, the parent company SK Group is actively buying up EUV raw material producers in the country and in neighboring countries to ensure SK Hynix has an uninterrupted supply of raw materials and materials in unstable markets.
